Electrically programmable read-only-memory device

Details Electrically programmable read-only-memory device Electrically programmable read-only-memory device

1977-07-05

1979-03-20

Edlow, Martin H.

357 28, 357 35, 357 86, H01L 6710, H01L 2356

Patent

active

041457021

ABSTRACT:
A matrix of columns and rows of conductors with transistors located at the intersection thereof on a semiconductor chip is formed utilizing the washed emitter process which locates the ohmic contact windows close to the PN junction so that a small size piece of free metal, i.e., not connected to any other conductor, may be located within a short distance, i.e., one micron or less, to the PN junction selected to be fused during the programming of a Read Only Memory. The small size of the free metal as near as possible to this PN junction minimizes heat losses, reduces power consumption and reduces programming errors normally incurred in the programming of Read Only Memories.

REFERENCES:
patent: 3641516 (1972-02-01), Castrucci et al.
patent: 3733690 (1973-05-01), Rizzi
patent: 3742592 (1973-07-01), Rizzi
patent: 3783048 (1974-01-01), Sanders
patent: 3848238 (1974-11-01), Rizzi
patent: 3971058 (1976-07-01), Fagan

Affiliated with

Also associated with

Rating

Electrically programmable read-only-memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically programmable read-only-memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable read-only-memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-223791