Electrically programmable read only memory array

Details Electrically programmable read only memory array Electrically programmable read only memory array

1993-12-20

1995-07-11

Popek, Joseph A.

Static information storage and retrieval

Interconnection arrangements

365 94, 365 51, 365104, 365185, 257202, H01L 2978

Patent

active

054327300

ABSTRACT:
There is provided an EPROM array including columns of EPROM cells, three types of diffusion bit lines, two types of metal lines and two types of select transistors. The metal lines are formed of metal 1 lines and metal 2 lines, where the metal 1 lines are formed into segmented lines and continuous lines and the metal 2 lines are continuous. The diffusion bit lines are formed of short, medium and continuous lines, where the medium length diffusion lines are associated with one segmented metal 1 line and one metal 2 line, the continuous lines are associated with one continuous metal 1 line and the short bit lines are formed of short segments and are not associated with metal lines. The diffusion lines repeat in the following order: medium length, short, continuous, short. One type of select transistor connects one short diffusion line to one metal 1 line and the second type of select transistor connects one segmented metal 1 line to one metal 2 line. Each column of EPROM cells are located between two neighboring diffusion lines.

REFERENCES:
patent: 4267632 (1981-05-01), Shappir
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5126808 (1992-06-01), Montalvo et al.
patent: 5151375 (1992-09-01), Kazerounian et al.
patent: 5204835 (1993-04-01), Eitan
W. Kammerer et al., "A New Virtual Ground Array Architecture For Very High Speed, High Density EPROMS", VLSI Circuits Symposium, Japan, 1991.

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