Electrically programmable read only memory

Details Electrically programmable read only memory Electrically programmable read only memory

1982-12-21

1986-05-20

Popek, Joseph A.

Static information storage and retrieval

Read only systems

Resistive

365 94, 357 51, G11C 1700

Patent

active

045905894

ABSTRACT:
A programmable read only memory (PROM) includes voltage programmable structures which are readily fabricated to provide predictable and selectable programming voltages. The resistor structure includes a body of semiconductor material having high electrical conductance and a surface contact region having a crystalline structure characterized by relatively high electrical resistance. The relatively high electrical resistance can be established by amorphotizing the surface region or by forming lattice defects in the crystalline structure such as by ion implantation. In programming the PROM, a sufficient voltage is applied across, or sufficient current is applied through, selected structures whereby the surface regions thereof are heated sufficiently to reduce the relatively high electrical resistance.

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