Electrically programmable nonvolatile semiconductor memory devic

Details Electrically programmable nonvolatile semiconductor memory devic Electrically programmable nonvolatile semiconductor memory devic

1992-07-15

1993-12-14

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

365184, 365104, 257321, G11C 1140

Patent

active

052709698

ABSTRACT:
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuits. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.

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IBM Technical Disclosure Bulletin, vol. 24, No. 7B dated Dec. 1981, H. N. Kotecha, "Electrically Alterable Non-Volatile Logic Circuits".
R. Stewart et al., RCA David Sarnoff Research Center, Route 1, Princeton, N.J. 08540, "A High Density EPROM Cell and Array", Symposium on VLSI Technology--Digest of Technical Papers, pp. 89-90, May 1986.

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