Electrically programmable nonvolatile semiconductor memory devic

Details Electrically programmable nonvolatile semiconductor memory devic Electrically programmable nonvolatile semiconductor memory devic

1994-08-09

1995-09-05

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 365226, G11C 1134

Patent

active

054485177

ABSTRACT:
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuit. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4233526 (1980-11-01), Kurogi et al.
patent: 4425632 (1984-01-01), Iwahashi et al.
patent: 4467453 (1984-08-01), Chiu et al.
patent: 4500975 (1985-02-01), Shirato
patent: 4580247 (1986-04-01), Adam
patent: 4648074 (1987-03-01), Pollachek
patent: 5008856 (1991-04-01), Iwahashi
patent: 5148394 (1992-09-01), Iwahashi
E. Adler, "Densely Arrayed EEPROM Having Low-Voltage Tunnel Write", IBM Technical Disclosure Bulletin, vol. 27, No. 6, Nov. 1984, pp. 3302-3307.
Prince and Due-Gundersen, "Semiconductor Memories", 1983, pp. 136-139.
IBM Technical Disclosure Bulletin, vol. 24, No. 7B dated Dec. 1981, H. N. Kotecha, "Electrically Alterable Non-Volatile Logic Circuits".
R. Stewart et al., RCA David Sarnoff Research Center, Route 1, Princeton, N.J. 08540, "A High Density EPROM Cell and Array", Symposium on VLSI Technology--Digest of Technical Papers, pp. 89-90, May 1986.

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