Static information storage and retrieval – Floating gate – Particular biasing
Patent
1988-06-28
1991-04-16
Hecker, Stuart N.
Static information storage and retrieval
Floating gate
Particular biasing
365184, 365104, 357 235, G11C 1140
Patent
active
050088564
ABSTRACT:
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuit. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.
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IBM Technical Disclosure Bulletin, vol. 24, No. 7B, Dec. 81, pp. 3811-3812, "Electrically Alterable Non-Volatile Logic Circuits" by Kotecha.
Stewart et al., "A High Density EPROM Cell and Array," Symposium on VLSI Technology Digest of Technical papers, pp. 89-90, May 1986.
Garcia Alfonso
Hecker Stuart N.
Kabushiki Kaisha Toshiba
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