Electrically programmable non-volatile memory cells device for a

Details Electrically programmable non-volatile memory cells device for a Electrically programmable non-volatile memory cells device for a

1997-02-27

1999-07-20

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518528, 36518529, G11C 1604

Patent

active

059264160

ABSTRACT:
A device incorporating electrically programmable nonvolatile memory cells for a small number of programming cycles, in which an individual cell is impressed, both during the write step and the erase step, a bias condition such that a charge flow can only occur between the drain region and the gate dielectric, and vice versa.

REFERENCES:
patent: 4794433 (1988-12-01), Kamiya et al.
patent: 4797856 (1989-01-01), Lee et al.
patent: 5199001 (1993-03-01), Tzeng
patent: 5390146 (1995-02-01), Atwood et al.
patent: 5392253 (1995-02-01), Atsumi et al.
patent: 5427963 (1995-06-01), Richart et al.
patent: 5530675 (1996-06-01), Hu
patent: 5612913 (1997-03-01), Cappelletti et al.

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