Electrically programmable non-volatile memory

Details Electrically programmable non-volatile memory Electrically programmable non-volatile memory

1981-12-04

1984-02-14

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

357 23, G11C 1140

Patent

active

044320752

ABSTRACT:
A memory array is disclosed which employs a plurality of floating gate EPROM or E.sup.2 PROM cells. Charge to program these cells is generated from charge generators, each shared by a plurality of cells. For example, one charge generator generates sufficient charge to allow selective programming of several hundred cells. The cells can be fabricated without the requirement to withstand high potentials, with less critical geometries and in some cases as two terminal devices.

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Verwey, "Nonavalanche Injection of Hot Carriers into SiO.sub.2 ", J. Appl. Phys., vol. 44, No. 6, 6/73, pp. 2681-2687.
Ning, "Hot-Electron Emission from Silicon into Silicon Dioxide", Solid-State Electronics, 1978, vol. 21, pp. 273-282.
Tarui et al., "Electrically Reprogammable Nonvolatile Semiconductor Memory", Proc. 5th Conf. (1973 Int.) on Solid-State Devices, Suppl. J. Japan Soc. Appl. Phys., vol. 43, 1974.
Bergeron, "Electrically Programmable Bipolar ROM Cell", IBM Tech. Disc. Bul., vol. 23, No. 12, 5/81, pp. 5294-5296.

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