Electrically programmable MOS read-only memory with isolated dec

Details Electrically programmable MOS read-only memory with isolated dec Electrically programmable MOS read-only memory with isolated dec

1976-10-01

1978-06-06

Konick, Bernard

Static information storage and retrieval

Powering

307DIG5, 365189, 365230, G11C 1140, G11C 700

Patent

active

040940128

ABSTRACT:
A programmable and erasable MOS read-only memory employing floating gate memory cells. Unique, compact decoders allow the high voltage programming signal to be fully decoded without exposing the decoding transistors to the high voltage. The memory employs field-effect transistors having four different voltage thresholds. One such device is employed in the sense amplifiers to provide compensation for process variations and another device is used to allow the output buffers to be readily "powered-down".

REFERENCES:
patent: 3895360 (1975-07-01), Cricchi et al.
patent: 3898630 (1975-08-01), Hansen et al.
patent: 3938108 (1976-02-01), Salsbury et al.
George Perlegos, Phillip Salsbury et al., "The Biggest Erasable PROM Yet Puts 16,384 Bits on a Chip", Mar. 3, 1977, Electronics, pp. 108-111.

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