Electrically programmable memory element with improved contacts

Details Electrically programmable memory element with improved contacts Electrically programmable memory element with improved contacts

2004-03-12

2008-08-05

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S098000, C257S004000, C257SE21068

Reexamination Certificate

active

07407829

ABSTRACT:
A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.

REFERENCES:
patent: 5312773 (1994-05-01), Nagashima
patent: 5414271 (1995-05-01), Ovshinsky et al.
patent: 5529956 (1996-06-01), Morishita
patent: 5854102 (1998-12-01), Gonzalez et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6258707 (2001-07-01), Uzoh

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