Static information storage and retrieval – Floating gate – Particular biasing
Patent
1986-09-15
1988-12-27
Heckler, Stuart N.
Static information storage and retrieval
Floating gate
Particular biasing
365189, 357 235, G11C 700, G11C 1140, H01L 2978
Patent
active
047945656
ABSTRACT:
An electrically programmable and eraseable memory element using source-side hot-electron injection. A semi-conductor substrate of a first conductivity type is provided with a source region and a drain region of opposite conductivity type and a channel region of the first conductivity type extending between the source and drain regions. A control gate overlies the channel region, and a floating gate insulated from the control gate, the source and drain regions and the channel region is located either directly underneath the control gate over the channel region, partially underneath the control gate over the channel region or spaced to the source side of the control gate. A weak gate control region is provided in the device near the source so that a relatively high channel electric field for promoting hot-electron injection is created under the weak gate control region when the device is biased for programming.
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Int. Symposium on VLSI Tech., SYS and APPL. Technical Papers May 13-15, 1987, "Effects of the Gate-to-Drain/Source Overlap in Mosfet", by Chan et al., pp. 101-105.
Int. Symposium on VLSI Tech., SYS and APPL. Technical Paper May 13-15, 1987, "Uniformity and Process Control of Gate Current Characteristics in Two Source-Side Injections Eprom Technologies", by A. T. Wu, pp. 246-250.
Chan Tung-Yi
Hu Chenming
Ko Ping K.
Wu Albert T.
Garcia Alfonso
Heckler Stuart N.
The Regents of the University of California
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