Static information storage and retrieval – Floating gate
Patent
1995-03-28
1997-11-11
Fears, Terrell W.
Static information storage and retrieval
Floating gate
36518901, G11C 1300
Patent
active
056871139
ABSTRACT:
An electrically programmable cell comprises a substrate of the first conductivity type having a channel region, a control gate on a first insulating layer above the channel region, a source region and a drain region of a second conductivity type, on both sides of the channel region, at least the drain region including a low-doped region adjacent to the channel, a floating gate on a second insulating layer above at least a portion of said low-doped region. The thickness of the second insulating layer is lower than the thickness of the first insulating layer and is low enough for having charge transfers through tunnel effect.
REFERENCES:
patent: 4203158 (1980-05-01), Bentchkowsky et al.
patent: 4590665 (1986-05-01), Owens et al.
patent: 4754320 (1988-06-01), Mizutani et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5202576 (1993-04-01), Liu et al.
patent: 5267194 (1993-11-01), Jang
Patent Abstracts of Japan vol. 14, No. 22 (E-874) Jan. 17, 1990 & JP-A-01262669 (Sony Corp.).
Patent Abstracts of Japan vol. 11, No. 227 (E-526) Jul. 23, 1987 & JP-A-62043179 (Seiko Epson Corp.).
IEEE Electron Device Letters, vol. 11, No. 11, Nov. 1190, New York, USA, pp. 514-516, Sameer Haddad et al. "An Investigation of Erase-Mode Dependent Hole Trapping In Flash EEPROM Memory Cell".
Patent Abstracts of Japan, vol. 13, No. 2 (E-700) Jan. 6, 1989 & JP-A-63215079 (OKI Electric Ind Co. Ltd.).
Guillaumot Bernard
Papadas Constantin
Fears Terrell W.
Morris James H.
SGS-Thomson Microelectronics S.A.
LandOfFree
Electrically programmable memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically programmable memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1234099