Static information storage and retrieval – Floating gate
Patent
1997-03-06
1998-04-14
Fears, Terrell W.
Static information storage and retrieval
Floating gate
3651851, 365218, G11C 1300
Patent
active
057401039
ABSTRACT:
An electrically programmable cell comprises a substrate of the first conductivity type having a channel region, a control gate on a first insulating layer above the channel region, a source region and a drain region of a second conductivity type, on both sides of the channel region, at least the drain region including a low-doped region adjacent to the channel, a floating gate on a second insulating layer above at least a portion of said low-doped region. The thickness of the second insulating layer is lower than the thickness of the first insulating layer and is low enough for having charge transfers through tunnel effect.
REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4590665 (1986-05-01), Owens et al.
patent: 4754320 (1988-06-01), Mizutani et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5202576 (1993-04-01), Liu et al.
patent: 5267194 (1993-11-01), Jang
patent: 5455790 (1995-10-01), Hart et al.
French Search Report from French Patent Application 94 04146, filed Mar. 30, 1994.
Patent Abstracts of Japan, vol. 14, No. 22 (E-874) Jan. 17, 1990 & JP-A-01 262 669 (Sony Corp.).
Patent Abstracts of Japan, vol. 11, No. 227 (E-526) Jul. 23, 1987 & JP-A-62043 179 (Sieko Epson Corp.).
IEEE Electron Device Letters, vol. 11, No. 11, Nov. 1990, New York, USA, pp. 514-516, Sameer Haddad, et al., "An Investigation of Erase-Mode Dependent Hole Trapping In Flash EEPROM Memory Cell".
Patent Abstracts of Japan, vol. 13, No. 2 (E-700) Jan. 6, 1989 & JP-A-63 215 079 (OKI Electric Ind. Co., Ltd.).
Guillaumot Bernard
Papadas Constantin
Fears Terrell W.
Morris James H.
SGS-Thomson Microelectronics S.A.
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