Electrically programmable memory cell

Static information storage and retrieval – Floating gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3651851, 365218, G11C 1300

Patent

active

057401039

ABSTRACT:
An electrically programmable cell comprises a substrate of the first conductivity type having a channel region, a control gate on a first insulating layer above the channel region, a source region and a drain region of a second conductivity type, on both sides of the channel region, at least the drain region including a low-doped region adjacent to the channel, a floating gate on a second insulating layer above at least a portion of said low-doped region. The thickness of the second insulating layer is lower than the thickness of the first insulating layer and is low enough for having charge transfers through tunnel effect.

REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4590665 (1986-05-01), Owens et al.
patent: 4754320 (1988-06-01), Mizutani et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5202576 (1993-04-01), Liu et al.
patent: 5267194 (1993-11-01), Jang
patent: 5455790 (1995-10-01), Hart et al.
French Search Report from French Patent Application 94 04146, filed Mar. 30, 1994.
Patent Abstracts of Japan, vol. 14, No. 22 (E-874) Jan. 17, 1990 & JP-A-01 262 669 (Sony Corp.).
Patent Abstracts of Japan, vol. 11, No. 227 (E-526) Jul. 23, 1987 & JP-A-62043 179 (Sieko Epson Corp.).
IEEE Electron Device Letters, vol. 11, No. 11, Nov. 1990, New York, USA, pp. 514-516, Sameer Haddad, et al., "An Investigation of Erase-Mode Dependent Hole Trapping In Flash EEPROM Memory Cell".
Patent Abstracts of Japan, vol. 13, No. 2 (E-700) Jan. 6, 1989 & JP-A-63 215 079 (OKI Electric Ind. Co., Ltd.).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrically programmable memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically programmable memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable memory cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-642722

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.