Electrically programmable memory cell

Details Electrically programmable memory cell Electrically programmable memory cell

1997-11-19

1999-05-11

Nelms, David

Static information storage and retrieval

Floating gate

36518526, 36518528, 36518529, 365218, G11C16/04

Patent

active

059034947

ABSTRACT:
A four state programmable memory cell includes a substrate of a first conductivity type having a channel region having a first side and a second side, a control gate located on a first insulating layer above the channel region, a drain region of a second conductivity type located on the substrate adjacent to the first side of the channel region, a source region of a second conductivity type located on the substrate adjacent to the second side of the channel region, a first insulated floating gate located on a second insulating layer above the drain region adjacent to the control gate, and a second insulated floating gate located on a third insulating layer above the source region adjacent to the control gate.

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