Electrically programmable low resistive antifuse element

Fishing – trapping – and vermin destroying

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437922, 437191, 437192, 437195, 437200, H01L 2170, H01L 21265

Patent

active

052504590

ABSTRACT:
The present invention introduces a process to fabricate very low resistive antifuse elements by introducing Antimony (Sb) into one or both of the antifuse element's electrodes and thereby resulting in said very low resistive (programmed) antifuse element. Introducing Sb into the antifuse electrode(s) reduces the depletion width of the dopant impurities thereby causing a large concentration of n+ dopants in the antifuse electrode(s). This allows a reduction in the voltage required across the electrodes to breakdown the inner lying dielectric and thus program or short the electrodes together. In addition, once the two electrodes become shorted together to form a filament, the Sb will flow form one or both electrode(s) and thereby heavily dope the filament itself with n+ atoms. With the presence of the heavy concentration of n+ atoms in the filament, the shorted antifuse element is reduced in resistance by as much as a few hundred ohms or below when compared to antifuse elements fabricated by other methods.

REFERENCES:
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4505027 (1985-03-01), Schwabe et al.
patent: 4682409 (1987-07-01), Thomas et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4899205 (1990-02-01), Hamdy et al.
Tanimoto et al. "A Novel 14V Programmable 4 kbit MOS PROM Using a Poly-Si Resistor Applicable to On-Chip Programmable Devices" IEEE Journal of Solid State Circuits, vol. SC-17 No. 1, Feb. 1982, pp. 62-66.

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