Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-07-10
2007-07-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S665000, C257S538000, C257S209000, C257SE23149, C438S132000, C438S215000, C438S281000, C438S333000, C438S467000
Reexamination Certificate
active
10904681
ABSTRACT:
A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline body, such as an oxide. The body may be doped, and may also include a silicide layer on the upper surface. This fuse structure may be successfully programmed over a wide range of programming voltages and time.
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Kothandaraman Chandrasekharan
Maciejewski Edward P.
Budd Paul
C. Li Todd M.
Jackson Jerome
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