Electrically programmable fuse

Details Electrically programmable fuse Electrically programmable fuse

2011-06-14

2011-06-14

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S529000, C257SE21592, C257SE23149

Reexamination Certificate

active

07960760

ABSTRACT:
A semiconductor device includes a fin-fuse and an SOI transistor. The SOI transistor is located on an SOI substrate and has a source region and a drain region. The fin-fuse is connected to one of the source/drain regions and has a fusible link located on the SOI substrate. The fusible link has a homogeneous dopant concentration.

REFERENCES:
patent: 6933591 (2005-08-01), Sidhu et al.
patent: 7067359 (2006-06-01), Wu
patent: 2002/0197781 (2002-12-01), Bryant et al.
patent: 2003/0193058 (2003-10-01), Fried et al.
patent: 2005/0173740 (2005-08-01), Jin
Xuejue Huang, et al., “Sub-50 nm P-Channel FinFET” IEEE Transactions on Electron Devices, vol. 48, No. 5, pp. 880-886, May 2001.

Affiliated with

Also associated with

Rating

Electrically programmable fuse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically programmable fuse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable fuse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2678298