Electrically programmable control gate injected floating gate so

Details Electrically programmable control gate injected floating gate so Electrically programmable control gate injected floating gate so

1979-08-10

1981-10-27

Edlow, Martin H.

357 4, 357 54, H01L 2978

Patent

active

042977193

ABSTRACT:
A non-volatile memory structure of the floating gate type is described wherein current carriers are injected onto the floating gate from the control gate as distinguished from the prior art which injects current carriers into the floating gate from the substrate. This invention teaches that by tailoring the capacitance between the control gate and the floating gate and the capacitance between the floating gate and the substrate different field intensities are created in the region between the floating gate and the control gate and in the region between the substrate and the floating gate. When the field intensity across the capacitor formed between the control gate and the floating gate is greater than the field intensity across the capacitor formed between the floating gate and the substrate, current carriers will be injected onto the floating gate from the control gate.

REFERENCES:
patent: 3500142 (1973-03-01), Kohng
patent: 3825945 (1974-07-01), Masuoka
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 4099196 (1978-07-01), Simko
patent: 4115795 (1978-09-01), Masuoka
patent: 4115914 (1978-09-01), Harari
patent: 4119995 (1978-10-01), Simko
patent: 4131906 (1978-12-01), Kinoshita
patent: 4143178 (1979-03-01), Harada
patent: 4150389 (1979-04-01), Roessler
patent: 4162504 (1979-07-01), Hsu
patent: 4199772 (1980-04-01), Natori

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