Electrically programmable antifuse using metal penetration of a

Details Electrically programmable antifuse using metal penetration of a Electrically programmable antifuse using metal penetration of a

1992-03-27

1994-03-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257530, 257751, 257771, 257768, H01L 2348

Patent

active

052987841

ABSTRACT:
An improved antifuse uses metal penetration of either a P-N diode junction or a Schottky diode. The P-N junction, or Schottky diode, is contacted by a diffusion barrier such as TiN, W, Ti-W alloy, or layers of Ti and Cr, with a metal such as Al. Al-CU alloy, Cu, Au, or Ag on top of the diffusion barrier. When this junction is stressed with voltage pulse producing a high current density, severe joule heating occurs resulting in metal penetration of the diffusion barrier and the junction. The voltage drop across the junction decreases by about a factor of ten after the current stress and is stable thereafter. Alternatively, a shallow P-N junction in a silicon substrate is contacted by a layer of metal that forms a silicide, such as Ti, Cr, W, Mo, or Ta. Stressing the junction with a voltage pulse to produce a high current density results in the metal penetrating the junction and reacting with the substrate to form a silicide.

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Fu, et al., "On the Failure Mechanisms of Titanium Nitride/Titanium Silicide Barrier Contacts under High Current Stress", I.E.E.E. Transactions on Electron Devices, vol. 35, No. 12, Dec. 1988, pp. 2151-2159.
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