Electrically programmable antifuse incorporating dielectric and

Details Electrically programmable antifuse incorporating dielectric and Electrically programmable antifuse incorporating dielectric and

1996-04-11

1998-06-23

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257753, 257764, H01L 2904, H01L 2900, H01L 2348

Patent

active

057708851

ABSTRACT:
An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first metal electrode, a first antifuse dielectric layer, preferably silicon nitride, disposed on the lower first electrode and an antifuse layer, preferably amorphous silicon, disposed on the first dielectric layer. An inter-layer dielectric layer is disposed on the antifuse layer and includes an antifuse via formed completely therethrough. A second antifuse dielectric layer, preferably silicon nitride, is disposed over the amorphous silicon layer in the antifuse via, and an upper second metal electrode is disposed over the second dielectric layer in the antifuse via.

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