Electrically programmable antifuse incorporating dielectric and

Details Electrically programmable antifuse incorporating dielectric and Electrically programmable antifuse incorporating dielectric and

1990-10-26

1993-01-19

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, H01L 2348, H01L 2946, H01L 2702, H01L 2962

Patent

active

051810964

ABSTRACT:
An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first dielectric layer disposed over the lower first electrode, a layer of amorphous silicon disposed above the first dielectric layer, a second dielectric layer disposed above the amorphous silicon layer, and an upper second electrode disposed above the second dielectric layer.

REFERENCES:
patent: 4748490 (1988-05-01), Hollingworth
patent: 4933898 (1990-06-01), Gilberg et al.
patent: 5070384 (1991-12-01), McCollum et al.

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