Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-08-10
1996-08-27
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257209, 257210, H01L 2904, H01L 2710, H01L 2900
Patent
active
055504043
ABSTRACT:
An antifuse comprises a lower electrode and an upper electrode separated by an interlayer dielectric. An antifuse cell opening is disposed in the interlayer dielectric. The antifuse cell opening comprises at least two steps, wherein a first portion thereof has a first area and a second portion thereof disposed above the first portion has a second area larger than said first area. Additional portions may be provided above the second portion having successively larger areas if the thickness of the interlayer dielectric warrants their inclusion.
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Cook et al., Amorphous Si Antifuse Technology for Bipolar Proms, Bipolar Circuits and Technology Meeting, 1986, pp. 99-100.
Chen Shih-Oh
Hu Hung-Kwei
Yen Yeouchung
Actel Corporation
Crane Sara W.
Martin Wallace Valencia
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