Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Patent
1991-11-12
1995-04-04
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
257530, 257764, H01L 2348, H01L 2946, H01L 2702, H01L 2962
Patent
active
054040299
ABSTRACT:
An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.
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IEEE Electron Device Letters, "A Sublithographic Anitfuse Structure for Field-Programmable Gate Array Applications," vol. 13, No. 1, Jan. 1992.
Forouhi Abdul R.
Husher John D.
Actel Corporation
Hardy David B.
Limanek Robert P.
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