Electrically programmable antifuse element

Details Electrically programmable antifuse element Electrically programmable antifuse element

1994-11-14

1996-11-26

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, active junction...

257530, 257764, H01L 2348, H01L 2946, H01L 2702, H01L 2962

Patent

active

055788360

ABSTRACT:
An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.

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Chen, et al. "A Sublithographic Antifuse Structure for Field-Programmable Gate Array Applications", IEEE Electron Device Letters, vol. 13, No. 1 Jan. 1992.

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