Electrically programmable and erasable nonvolatile semiconductor

Details Electrically programmable and erasable nonvolatile semiconductor Electrically programmable and erasable nonvolatile semiconductor

1995-07-31

1997-08-19

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518513, 36518533, G11C 1140

Patent

active

056595050

ABSTRACT:
In erasing, electrons are simultaneously injected into floating gates from sources of a plurality of memory cells. Thus, the threshold voltages of the plurality of memory cells are increased. In programming, electrons are emitted from a floating gate of a selected memory cell to a drain. Thus, the threshold voltage of the selected memory cell is reduced.

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