Electrically programmable and erasable nonvolatile semiconductor

Static information storage and retrieval – Interconnection arrangements

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36518511, 36518513, 36518517, G11C 700

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active

058986065

ABSTRACT:
In erasing, electrons are simultaneously injected into floating gates from sources of a plurality of memory cells. Thus, the threshold voltages of the plurality of memory cells are increased. In programming, electrons are emitted from a floating gate of a selected memory cell to a drain. Thus, the threshold voltage of the selected memory cell is reduced.

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