Electrically programmable and erasable memory cells with field p

Details Electrically programmable and erasable memory cells with field p Electrically programmable and erasable memory cells with field p

1989-07-26

1990-08-07

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 53, 365185, H01L 2978, H01L 2940, G11C 1134

Patent

active

049472224

ABSTRACT:
First and second EEPROM cells have first and second source regions (28a, 28b) formed in a semiconductor layer (12) to be of a second conductivity type opposite the first conductivity type of the layer and to be spaced apart from each other. A field plate conductor (100) is insulatively disposed adjacent, and defines, an inversion region (102), and further is laterally spaced between the first and second source regions (28a, 28b). The inversion region (102) is inverted from the first conductivity type to the second conductivity type upon application of a predetermined voltage to the field plate conductor (100). First and second channel regions (48a, 48b) are defined between the respective source regions (28a, 28b) and the inversion region (102) and each include floating gate and control gate subchannel regions (60a, 62a, 62b, 60b). First and second floating gate conductors (40a, 40b) are insulatively disposed adjacent respective floating gate subchannel regions (60 a, 60b) to control their conductance. A control gate conductor is insulatively disposed adjacent the control gate subchannel regions (62a, 62b) to control their conductance. In another embodiment, the floating gate conductor (100) is replaced with a pair of field plate conductors (42a, 42b) that control the conductance of respective subchannel regions (64a, 64b). The field plate conductors (42a, 42b) act to self-align a diffused drain region (46) that replaces the inversion region (102).

REFERENCES:
patent: 4375086 (1983-02-01), van Velthoven
patent: 4380804 (1983-04-01), Lockwood et al.
patent: 4462090 (1984-07-01), Iizuka
patent: 4750024 (1988-07-01), Schreck

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