Electrically programmable and erasable memory cell

Details Electrically programmable and erasable memory cell Electrically programmable and erasable memory cell

1981-12-28

1984-10-16

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 239, 357 41, 357 55, 357 59, 365185, H01L 2978, H01L 2702, H01L 2906, H01L 2904

Patent

active

044778252

ABSTRACT:
An electrically programmable and eraseable memory cell in which charge carriers are tunnelled between a floating gate and a drain region in the substrate through a thin oxide tunnel region, the borders of said tunnel region being confined to a small area well inside the borders of both the drain region and the floating gate. Dual paths are utilized to connect the tunnel region of the gate to the memory cell region of the gate.

REFERENCES:
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4162504 (1979-07-01), Hsu
patent: 4180826 (1979-12-01), Shappin
patent: 4203158 (1980-05-01), Frohman-Bentchowsky
patent: 4300212 (1981-11-01), Simko
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4363109 (1982-12-01), Gardner, Jr.
patent: 4377857 (1983-03-01), Tickle

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