Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1982-01-29
1985-12-10
James, Andrew J.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 235, 357 2315, 365185, H01L 2904, H01L 2978, G11C 1134
Patent
active
045583447
ABSTRACT:
An MOS memory cell (44) including an electrically-programmable and electrically-erasable storage device (46) fabricated on a semiconductor substrate (50) is disclosed. The storage device (46) is divided into sensing and programming sections (90, 92), each of which sections comprises vertically-aligned floating gate and program gate portions (62L, 62R, 72L, 72R) respectively formed from first and second electrically-conductive strips (62, 72). A tunneling region (60) is formed in the substrate (50) beneath the floating gate portion (62R) of the storage device programming section (92) and a thin tunnel dielectric (70) is interposed between the tunneling region (60) and the programming section floating gate portion (62R to facilitate tunneling of charge carriers therebetween. First and second source/drain regions (94, 96) physically isolated from the tunneling region (60) are established in the substrate (50) in alignment with the sensing section floating gate and program gate portions (62L, 72L). The memory cell (44) additionally includes a selection device (48) comprised of first and second field effect transistor structures (98, 104) which can be activated during memory cell read, program and erase operations to supply selected unipolar potentials to the tunneling region (60) and the second source/drain region (96) associated with the storage device sensing section.
REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 3719866 (1973-03-01), Naber et al.
patent: 3868187 (1975-02-01), Masuoka
patent: 3919711 (1975-11-01), Chou
patent: 3992701 (1976-11-01), Abbas et al.
patent: 4004159 (1977-01-01), Rai et al.
patent: 4011576 (1977-03-01), Uchida et al.
patent: 4016588 (1977-04-01), Ohya et al.
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4047974 (1977-09-01), Harari
patent: 4115914 (1978-09-01), Harari
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky
patent: 4402904 (1983-08-01), Arakawa
James Andrew J.
Prenty Mark
Seeq Technology Inc.
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