Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-03-22
2011-03-22
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S774000, C257SE23011, C257SE23067, C257SE23173, C257SE23174
Reexamination Certificate
active
07911049
ABSTRACT:
An electrically optimized and structurally protected micro via structure for high speed signals in multilayer interconnection substrates is provided. The via structure eliminates the overlap of a contact with the reference planes to thereby reduce the via capacitance and thus, the via impedance mismatch in the via structure. As a result, the via structure is electrically optimized. The via structure further comprises one or more floating support members placed in close proximity to the via within a via clearance area between the via and the reference planes. The floating support members are “floating” in the sense that they are not in electrical contact with either the via or the reference planes. Thus, they are not provided for purposes of signal propagation but only for structural support. The floating support members may be connected to one another by way of one or more microvia structures.
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Harvey Paul M.
Kawasaki Kazushige
Yamada Gen
International Business Machines - Corporation
Lammes Francis
Talpis Matthew B.
Walder, Jr. Stephen J.
Warren Matthew E
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