Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-01-22
1986-04-22
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29580, 148 15, 357 81, 357 73, 357 80, 357 55, H01L 2302, H01L 2330, H01L 2906
Patent
active
045832838
ABSTRACT:
An improved power semiconductor device and manufacturing method are described wherein the external, thermally conducting, heat transfer face of the device is electrically insulated by a glassy dielectric which is intimately bonded directly to the conductive heat spreader supporting the semiconductor die. By forming the exposed corners of the heat spreader to be substantially smooth curved surfaces having a predetermined minimum radius of curvature greater than the thickness of the glassy dielectric, formation of a ridge of glass at the corners and edges of the heat spreader is avoided. For ease of assembly the piece parts are initially substantially flat and parallel. A molding compound of controlled shrinkage is used to avoid distorting the substantially flat smooth insulated heat transfer face which remains exposed in the encapsulated device.
REFERENCES:
patent: 3902148 (1975-08-01), Drees et al.
patent: 3946428 (1976-03-01), Anazawa et al.
patent: 4278990 (1981-07-01), Fichot
patent: 4278991 (1981-07-01), Ritchie et al.
patent: 4340900 (1982-07-01), Goronkin
patent: 4450471 (1984-05-01), Wellhoefer et al.
patent: 4510519 (1985-04-01), Dubois et al.
DuBois Jerry M.
Spanjer Keith G.
Handy Robert M.
Hearn Brian E.
Hey David A.
Motorola Inc.
LandOfFree
Electrically isolated semiconductor power device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically isolated semiconductor power device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically isolated semiconductor power device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1908482