Electrically isolated semiconductor devices on common crystallin

Details Electrically isolated semiconductor devices on common crystallin Electrically isolated semiconductor devices on common crystallin

1974-04-22

1980-12-09

Miller, Jr., Stanley D.

357 50, 357 51, 357 59, 357 47, H01L 2704, H01L 2712, H01L 2904

Patent

active

042387620

ABSTRACT:
A semiconductor device comprises electrically isolated semiconductor segments embedded in a common crystalline substrate. Each of the semiconductor segments is electrically isolated from the other segments and from the substrate by an insulating film disposed therebetween. The substrate, the semiconductor segments, and the insulating film are thermally compatible over a wide temperature range, so that the insulating film also serves to effect a bond between the substrate and the segments.

REFERENCES:
patent: 3158788 (1964-11-01), Last
patent: 3290753 (1966-12-01), Chang
patent: 3370980 (1968-02-01), Anderson
Ultrapurification of Semiconductor Materials, Proceed. of the Conf. on Ultrapurification of Semiconductor Materials, Boston, Mass. Apr. 11-13, 1961, p. 34.
H. Wolf, Semiconductors, Wiley-Interscience, 1971, N.Y., p. 11.
J. C. Irvin, "Resistivity of Bulk Silicon and of Diffused Silicon" Bell. Syst. Tech. J., 41, 387 (1962).
Handbook of Chemistry and Physics, 55th Edition, 1974-1975, C.R.C. Press, p. B-30.

Affiliated with

Also associated with

Rating

Electrically isolated semiconductor devices on common crystallin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically isolated semiconductor devices on common crystallin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically isolated semiconductor devices on common crystallin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2283338