Electrically isolated MESFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

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Details

257192, 257 20, 257 24, 257745, H01L 2980, H01L 2906, H01L 2348, H01L 29417

Patent

active

054830893

ABSTRACT:
An electrically isolated MESFET includes a compound semiconductor substrate; a plurality of compound semiconductor layers disposed on the compound semiconductor substrate; a MESFET structure in a prescribed region of the compound semiconductor layers; an electrically isolating region in the compound semiconductor layers surrounding and electrically isolating the MESFET structure from the compound semiconductor layers outside the electrically isolating region, wherein the compound semiconductor layer most remote from the compound semiconductor substrate has the highest conductivity of the compound semiconductor layers; a recess penetrating the compound semiconductor layer most remote from the compound semiconductor substrate and at least the compound semiconductor layer adjacent the compound semiconductor layer most remote from the compound semiconductor substrate, the recess dividing the compound semiconductor layer most remote from the compound semiconductor substrate into mutually separated first and second parts; a gate electrode disposed in the recess, contacting and forming a Schottky barrier with one of the compound semiconductor layers; and source and drain electrodes respectively disposed on and contacting the first and second parts of the compound semiconductor layer most remote from the compound semiconductor substrate.

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patent: 5151757 (1992-09-01), Enoki et al.
patent: 5162877 (1992-11-01), Mori
patent: 5243207 (1993-09-01), Plumton et al.
patent: 5422501 (1995-06-01), Bayraktaroglu

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