Electrically-flash-erasable and electrically-programmable memory

Details Electrically-flash-erasable and electrically-programmable memory Electrically-flash-erasable and electrically-programmable memory

1990-03-15

1991-05-28

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365185, 437 43, 437 44, H01L 27115, H01L 21235

Patent

active

050198793

ABSTRACT:
The flash EEPROM memory device with the floating gate that is over the channel area and insulated from the channel by 200 to 1000 A of gate oxide, and that is also over the thin tunnel dielectric area at the source and insulated from the source by 70 A to 200 A of tunnel dielectric. Another improvement of the proposed version of the flash EEPROM memory device is that the tunnel dielectric area is small and self aligned to the floating gate.

REFERENCES:
patent: 4783766 (1988-11-01), Samachisa et al.
patent: 4878101 (1989-10-01), Hsieh et al.
patent: 4931847 (1980-06-01), Corda
patent: 4947222 (1970-08-01), Gill et al.

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