Electrically erasable reference cell for accurately determining

Details Electrically erasable reference cell for accurately determining Electrically erasable reference cell for accurately determining

1996-11-27

1998-06-30

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 36518524, 365210, G11C 1134

Patent

active

057743959

ABSTRACT:
A reference cell in a nonvolatile memory is electrically erasable and the electrically erasable character of the memory is exploited to expand the voltage range over which a differential amplifier is useful for sensing the state of a bit. Selected elements of a reference cell are electrically erased and reprogrammed for accurately tuning the sensing of multiple data states in a memory cell. For example, 64 or more data states may be tuned so that a single megabyte of memory is allocated to store six megabytes of information.

REFERENCES:
M. Bauer, et al. "A Multilevel-Cell 32Mb Flash Memory", 1995 IEE International Solid State Circuits Conference, Feb. 16, 1995, pp. 132-133.
K. Yoshikawa, "Impact of Cell Threshold Voltage Distribution in the Array of Flash Memories on Scaled and Multilevel Flash Cell Design", 1996 Symposium on VLSI Technology Papers, IEEE, 1996, pp. 240-241.

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