Electrically erasable programmable read only memory cell includi

Details Electrically erasable programmable read only memory cell includi Electrically erasable programmable read only memory cell includi

1986-10-02

1987-12-15

Carroll, J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 51, 357 54, 357 59, 357 55, 357 91, 365185, H01L 2978, H01L 2702, H01L 2934

Patent

active

047136774

ABSTRACT:
An EEPROM cell is described which includes a trench formed in the field oxide adjacent to the EEPROM cell. Both the control gate and the floating gate of the cell are formed over this trench. By forming both gates above the trench, the capacitive coupling between the gates is increased. Thus a EEPROM cell constructed in accordance with the teachings of this invention may be constructed using a smaller surface area of the integrated circuit or may utilize a smaller programming voltage to charge and discharge the floating gate.

REFERENCES:
patent: 4004159 (1977-01-01), Rai et al.
patent: 4169291 (1979-09-01), Rossler
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4542396 (1985-09-01), Schuttan et al.
patent: 4590504 (1986-05-01), Guterman
Y. L. Tsang, "Buried-Gate Electrically Alterable Memory Device", IBM Technical Disclosure Bulletine, vol. 24, (1981), pp. 1331-1333.

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