Electrically erasable programmable read only memory

Static information storage and retrieval – Magnetic bubbles – Guide structure

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Details

357 236, 357 2314, 365185, H01L 2978

Patent

active

045905037

ABSTRACT:
A floating gate electrically erasable programmable read only memory (E.sup.2 PROM) having polycrystalline silicon gates with a control gate on the poly 1 level and a floating gate on the poly 2 level is disclosed.

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