Electrically erasable programmable read-only memory

Details Electrically erasable programmable read-only memory Electrically erasable programmable read-only memory

1980-11-18

1983-03-22

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365182, G11C 1140

Patent

active

043778577

ABSTRACT:
An electrically erasable programmable read-only memory (E.sup.2 PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E.sup.2 PROM array consists of a single floating gate field effect transistor. The E.sup.2 PROM of the present invention provides for row erasure and single bit writing.

REFERENCES:
patent: 3508211 (1970-04-01), Wegener
patent: 3996657 (1976-12-01), Simko et al.

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