Electrically erasable programmable read only memory

Details Electrically erasable programmable read only memory Electrically erasable programmable read only memory

1980-08-01

1982-12-28

Moffitt, James W.

Static information storage and retrieval

Floating gate

Particular biasing

365104, G11C 1140

Patent

active

043665551

ABSTRACT:
An Electrically Erasable Programmable Read-Only Memory (EEPROM) requires only a single voltage applied to a single control gate for both erasing and writing operations. Writing is accomplished by hot channel electron injection to charge the floating gate of a selected device with electrons. Nonselected devices are kept from charging by either floating their sources or grounding their gates. Devices are erased by grounding the source and drain regions and causing the electrons stored in the floating gates to tunnel to the control gate. Preferred ratioing of the intra-device capacitances prevents erasure of nonselected devices during writing.

REFERENCES:
patent: 4282446 (1981-08-01), McElroy
IEEE Transactions on Electron Devices-vol. ED 23, No. 4, Apr. 1976, pp. 379-387.

Affiliated with

Also associated with

Rating

Electrically erasable programmable read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable programmable read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable programmable read only memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1340845