Static information storage and retrieval – Read only systems – Semiconductive
Patent
1979-06-18
1982-07-27
Fears, Terrell W.
Static information storage and retrieval
Read only systems
Semiconductive
365184, 357 23, G11C 1140
Patent
active
043420990
ABSTRACT:
An electrically programmable read only memory or EPROM is formed by an MNOS process compatible with N-channel silicon gate manufacturing methods. Row address lines and gates are second level polysilicon, and output and ground lines are defined by elongated N+ regions formed beneath thin field oxide. Each storage cell is an MNOS transistor having an enhancement mode MOS transistor in series with it. The gates of the MNOS transistors are program address lines for programming and are formed by first level polycrystalline silicon. Each MNOS transistor in the array is programmed to be a logic "1" or "0" by proper voltages applied to row, output and program address lines to store charge at the oxide-nitride interface and thus change the threshold voltage for selected transistors. Then readout is provided using the MOS series transistors for access. A very dense array results.
REFERENCES:
patent: 3691537 (1972-09-01), Burgess et al.
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
patent: 3781831 (1973-12-01), Neugebauer et al.
patent: 4090257 (1978-05-01), Williams
patent: 4103185 (1978-07-01), Denes
patent: 4122544 (1978-10-01), McElroy
Fears Terrell W.
Graham John G.
Texas Instruments Incorporated
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