Electrically erasable programmable MNOS read only memory

Static information storage and retrieval – Read only systems – Semiconductive

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365184, 357 23, G11C 1140

Patent

active

043420990

ABSTRACT:
An electrically programmable read only memory or EPROM is formed by an MNOS process compatible with N-channel silicon gate manufacturing methods. Row address lines and gates are second level polysilicon, and output and ground lines are defined by elongated N+ regions formed beneath thin field oxide. Each storage cell is an MNOS transistor having an enhancement mode MOS transistor in series with it. The gates of the MNOS transistors are program address lines for programming and are formed by first level polycrystalline silicon. Each MNOS transistor in the array is programmed to be a logic "1" or "0" by proper voltages applied to row, output and program address lines to store charge at the oxide-nitride interface and thus change the threshold voltage for selected transistors. Then readout is provided using the MOS series transistors for access. A very dense array results.

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patent: 3781831 (1973-12-01), Neugebauer et al.
patent: 4090257 (1978-05-01), Williams
patent: 4103185 (1978-07-01), Denes
patent: 4122544 (1978-10-01), McElroy

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