Electrically erasable non-volatile semiconductor memory

Details Electrically erasable non-volatile semiconductor memory Electrically erasable non-volatile semiconductor memory

1977-02-22

1978-09-26

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

H01L 2978

Patent

active

041159144

ABSTRACT:
A non-volatile semiconductor storage device comprising a dual gate field effect transistor in which an electrically floating gate acts as a charge storage medium. An insulating layer of an appropriate dielectric material separates the floating gate from the active portion of the transistor. A predetermined section of this insulating layer is relatively thin to permit this section of the floating gate to be relatively close to a corresponding predetermined section of the transistor, thus facilitating the transfer of charges between the transistor substrate and the gate. When charges reach the floating gate either through tunneling or avalanche injection, they are entrapped and stored there, thus providing memory in the structure. That is, the electric field induced by these charges is maintained in the transistor even after the field inducing force is removed. Erasing is achieved by removing the charges from the floating gate by reverse tunneling through the relatively thinner insulator region.

REFERENCES:
patent: 3865652 (1975-02-01), Agusta et al.
patent: 4016588 (1977-04-01), Ohya et al.
Tickle et al; "Electrically Alterable Nonvolatile Semiconductor Memories" Session 4, 1972 Wescon Technical Papers.
Rapp; "Silicon on Sapphire" Electronics Products Magazine (1/15/73), pp. 83-84.

Affiliated with

Also associated with

Rating

Electrically erasable non-volatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable non-volatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable non-volatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2081593