Electrically-erasable, electrically-programmable read-only memor

Details Electrically-erasable, electrically-programmable read-only memor Electrically-erasable, electrically-programmable read-only memor

1990-03-15

1991-04-30

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 54, 365185, H01L 2968, H01L 2934, G11C 1134

Patent

active

050123076

ABSTRACT:
An electrically-erasable, programmable ROM cell, or an EEPROM cell, is constructed using an enhancement transistor merged with a floating-gate transistor, where the floating-gate transistor has a small tunnel window, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. The bitlines and source/drain regions are buried beneath relatively thick silicon oxide, which allows a favorable ratio of control gate to floating gate capacitance. Programming and erasing are provided by the tunnel window are near or above the channel side of the source. The window has a thinner dielectric than the remainder of the floating gate, to allow Fowler-Nordheim tunneling. By using dedicated drain or ground lines, rather than a virtual-ground layout, and by using thick oxide for isolation between bitlines, the floating gate can extend onto adjacent bitlines and isolation area, resulting in a favorable coupling ratio. Isolation between wordlines is also by thick thermal oxide in a preferred embodiment, further improving the coupling ratio. Bitline and wordline spacing may be selected for optimum pitch or aspect ratio. Bitline to substrate capacitance is minimized.

REFERENCES:
patent: 4180826 (1979-12-01), Shappir
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky
patent: 4377818 (1983-03-01), Kuo et al.
patent: 4377857 (1983-03-01), Tickle
patent: 4493057 (1982-09-01), McElroy
patent: 4590504 (1986-05-01), Gutterman
patent: 4622737 (1986-11-01), Ravaglia
patent: 4668970 (1987-05-01), Yatsuda et al.
patent: 4686558 (1987-08-01), Adam
patent: 4750024 (1988-06-01), Schreck

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