Fishing – trapping – and vermin destroying
Patent
1994-06-27
1995-10-24
Thomas, Tom
Fishing, trapping, and vermin destroying
437 48, 437 52, 437203, H01L 218249
Patent
active
054609895
ABSTRACT:
A p-type silicon substrate 1 is provided with a trench 11. A second gate oxide film 4 is formed on a bottom wall 11a of the trench. The trench has a side wall 11b on which a first gate oxide film 9 is formed. A thickness of the second gate oxide film 4 is smaller than that of the first gate oxide film 9. A floating gate electrode 5 is formed on the second and first gate oxide films 4 and 9. At the vicinities of the opposite ends of the floating gate electrode 5, there are formed an n.sup.+ -drain diffusion region 2 and n.sup.+ -source diffusion region 3. A control gate electrode 7 is formed over the floating gate electrode 5 with an layer insulating film 6 interposed therebetween. In an electrically programmable and erasable semiconductor memory device (EEPROM) of a flash type, a writing efficiency is improved, a reliability is improved with respect to quality control, and dimensions of memory transistors are reduced.
REFERENCES:
patent: 4796228 (1989-01-01), Baglee
patent: 4853348 (1989-08-01), Tsubouchi et al.
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 4929988 (1990-05-01), Yoshikawa
patent: 4972371 (1990-11-01), Komori et al.
patent: 5045490 (1991-09-01), Esquivel
patent: 5071782 (1991-12-01), Mori
patent: 5180680 (1993-01-01), Yang
Kynett et al., "An In-System Reprogrammable 32K X 8 CMOS Flash Memory", IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1157-1163.
Yoshikawa et al., "A Reliable Profiled Lightly Doped Drain (PLD) Cell for High-Density Submicrometer EPROM's and Flash EEPROM's", IEEE Transactions on Electron Devices, vol. 37, No. 4, Apr. 1990, pp. 999-1005.
Mitsubishi Denki & Kabushiki Kaisha
Thomas Tom
LandOfFree
Electrically erasable and programmable semiconductor memory devi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically erasable and programmable semiconductor memory devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable and programmable semiconductor memory devi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1886304