Electrically erasable and programmable read only memory

Details Electrically erasable and programmable read only memory Electrically erasable and programmable read only memory

1985-10-29

1987-04-28

Carroll, J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 20, 357 235, 357 2313, 357 41, 357 86, 365185, H01L 2978, H01L 2906, H01L 2934, H01L 2702

Patent

active

046618333

ABSTRACT:
An electrically erasable and programmable read only memory comprises a semiconductor substrate of a first conductivity type, source and drain regions both of a second conductivity type formed in the surface of said semiconductor substrate, a gate insulation film formed on that section of the surface of said substrate which includes a channel region defined between said source and drain regions, a first diffusion region of the second conductivity type, part of which is formed in said substrate and contacts said drain region and which has a lower impurity concentration than said drain region, a first insulation film formed on said first diffusion region, a floating gate formed on said gate insulation film, part of which extends over said first insulation film, a second diffusion region of the first conductivity type formed in the surface of said first diffusion region which lies near said extension of the floating gate, a third diffusion region of the first conductivity type formed in the surface of said first diffusion region, a second insulation film covering said floating gate, and a control gate crossing at least that section of the surface of said second insulation layer which faces part of said floating gate.

REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4228527 (1980-10-01), Gerber et al.
patent: 4379343 (1983-04-01), Moyer
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 4532535 (1985-07-01), Gerber et al.
Iizuka et al., "Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory," Proceedings of the 4th Conf. on Solid State Devices, Tokyo, 1972, Supplement to the Journal of Japan Society of Applied Physics, vol. 42, (1973), pp. 158-166.
Nissan-Cohen et al., "High Field Current Induced-Positive Charge Transients in SiO.sub.2 ", J. Appl. Phys., vol. 54, pp. 5793-5800 (1983).

Affiliated with

Also associated with

Rating

Electrically erasable and programmable read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable and programmable read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable and programmable read only memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-480011