Electrically erasable and programmable non-volatile memory prote

Static information storage and retrieval – Powering – Data preservation

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365218, G11C 1606

Patent

active

060381906

ABSTRACT:
To reduce the risks of erroneous data writing into an electrically erasable and programmable non-volatile memory (10) (EEPROM) when a failure in the memory (10) voltage supply (Vcc) occurs during a programming or erasing operation, the memory (10) comprising means (30) of generating programming or erasing high voltage (Vpp), means (SW.sub.i, TI.sub.i,) are provided for maintaining the high voltage (Vpp) supply to the cells (C.sub.i,j) of the memory and capacity (Chv, CR.sub.2) of sufficient power to maintain the high voltage (Vpp) during the time required for the programming or erasing operation. The invention is useful particularly for EEPROM memories mounted on chip cards and electronic labels.

REFERENCES:
patent: 5267218 (1993-11-01), Elbert
patent: 5371709 (1994-12-01), Fisher et al.
Search Report dated Sep. 10, 1997 from related PCT application PCT/FR 97/00922.

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