Electrically erasable and programmable non-volatile memory devic

Details Electrically erasable and programmable non-volatile memory devic Electrically erasable and programmable non-volatile memory devic

1992-08-20

1995-06-27

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

365184, 365218, 365900, G11C 1134

Patent

active

054285682

ABSTRACT:
In a programming mode of operation of a flash type non-volatile semiconductor memory device, an erase voltage pulse is applied a memory cell to bring the memory cell into an erased state. Then, an after-erase writing operation is executed for a memory cell having a threshold voltage lower than a predetermined threshold voltage under the condition of small change in threshold voltage. Alternatively, an erase voltage pulse is applied only to a memory cell having a threshold voltage greater than a predetermined threshold voltage to carry out erasing. Also, after a memory cell is brought to a depletion state by application of an erase voltage pulse, data writing of "0" and "1" is carried out by injection of electrons into the floating gate. The electron injection rate to the floating gate for writing data "0" is set to be greater than that for writing data "1". The state of storing data "1" corresponds to an erase state. According to this scheme, an excessively erased memory cell does not exist and the distribution range of threshold voltage can be reduced. Furthermore, the reprogramming time period for a memory cell data can be carried out in a short time.

REFERENCES:
patent: 5267207 (1993-11-01), Jinbo
patent: 5270979 (1993-12-01), Harari et al.
patent: 5278786 (1994-01-01), Kawauchi et al.

Affiliated with

Also associated with

Rating

Electrically erasable and programmable non-volatile memory devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable and programmable non-volatile memory devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable and programmable non-volatile memory devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-292195