Electrically-erasable and electrically-programmable memory stora

Details Electrically-erasable and electrically-programmable memory stora Electrically-erasable and electrically-programmable memory stora

1990-03-13

1991-06-04

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365185, 437 43, 437 44, H01L 27115, H01L 21235

Patent

active

050218484

ABSTRACT:
The EEPROM has the selection device in series with the memory device having a floating gate disposed over the channel between the buried drain and the buried source, and insulated from the channel by 200 A to 1000 A of gate oxide, an add-on floating gate shorted electrically to the floating gate, and disposed over and insulated from the buried drain by 40 A to 150 A of tunnel dielectric, and a control gate disposed over and insulated from the floating gate. The improvement in the proposed version of the memory device in the EEPROM is that the tunnel dielectric area is very small and is self aligned to the floating gate.

REFERENCES:
patent: 4931847 (1990-06-01), Corda

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