Inductor devices – With electric and/or magnetic shielding means
Reexamination Certificate
2006-08-01
2006-08-01
Nguyen, Tuyen T (Department: 2832)
Inductor devices
With electric and/or magnetic shielding means
C336S200000
Reexamination Certificate
active
07084728
ABSTRACT:
An integrated circuit, such as a radio frequency integrated circuit (RFIC), has a first layer bearing first metallization patterned for defining a first inductive coil, a second layer bearing second metallization patterned for defining a second inductive coil that overlies the first inductive coil and that is magnetically coupled to the first inductive coil through a third layer interposed between the first layer and the second layer. The third layer bears third metallization for defining an electric shield or electrostatic shield. The third metallization is patterned into a plurality of structures having shapes intended to minimize eddy currents. The electric shield is connected to further metallization that carries a ground potential. The third layer may further bear other metallization for coupling together at least two components of the integrated circuit. The integrated circuit may be fabricated by a CMOS process, and the first and second coils may be a primary coil and a secondary coil, respectively, of a radio frequency transformer. An additional electric shield may also be included, and in this case one electric shield can be coupled to a ground potential associated with the primary coil, and the second electric shield can be coupled to a ground potential associated with the secondary coil.
REFERENCES:
patent: 5150046 (1992-09-01), Lim
patent: 5598327 (1997-01-01), Somerville et al.
patent: 5877667 (1999-03-01), Wollesen
patent: 6031445 (2000-02-01), Marty et al.
patent: 6420952 (2002-07-01), Redilla
patent: 6580334 (2003-06-01), Simburger et al.
patent: 6593838 (2003-07-01), Yue
patent: 6756656 (2004-06-01), Lowther
patent: 2001/0050607 (2001-12-01), Gardner
patent: 2003/0001713 (2003-01-01), Gardner
patent: 2003/0030534 (2003-02-01), Gu et al.
patent: 2003/0071706 (2003-04-01), Christensen
“Analytical Modeling and Characterization of Deep-Submicrometer Interconnect”, Sylvester, Dennis, Proceedings Of the IEEE, vol. 89, No. 5, May 2001, pp. 634-664.
Harrington & Smith ,LLP
Nguyen Tuyen T
LandOfFree
Electrically decoupled integrated transformer having at... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically decoupled integrated transformer having at..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically decoupled integrated transformer having at... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3642247