Electrically conductive interconnects for integrated circuits

Details Electrically conductive interconnects for integrated circuits Electrically conductive interconnects for integrated circuits

1995-12-27

1999-08-17

Nguyen, Viet Q.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257773, 257776, 257741, 257751, 257734, 257665, H01L 2978

Patent

active

059397918

ABSTRACT:
A sharp transition or step is first formed on the surface of a semiconductor material. A layer of interconnect metal is deposited by conformal CVD and substantially the same thickness of the metal as deposited is removed by anisotropic etching, leaving a narrow line of the interconnect metal at the step portion to serve as an interconnect line. Interconnect lines of 0.5 micron or below can be achieved since the process is not limited by photostepper resolution.

REFERENCES:
patent: 5040036 (1991-08-01), Hazani
patent: 5115288 (1992-05-01), Manley
patent: 5267194 (1993-11-01), Jang
patent: 5422504 (1995-06-01), Chang et al.

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