Electrically conducting, directly bonded infrared windows

Details Electrically conducting, directly bonded infrared windows Electrically conducting, directly bonded infrared windows

1996-03-27

1998-10-06

Henry, Jon W.

Optical: systems and elements

Having significant infrared or ultraviolet property

64 41, G02B 100

Patent

active

058186310

ABSTRACT:
An electrically conductive infrared (IR) window (10) has high transmittance at IR wavelengths and includes an electrically conductive protective layer (14) which is direct bonded to a substrate (16) at room temperature without adhesive therebetween. The protective layer (14) and substrate (16) are transparent at IR wavelengths. The protective layer (14) and the substrate (16) are annealed at a bonding temperature above room temperature to enhance the bond strength. The protective layer (14) preferably comprises at least one of doped silicon and doped gallium arsenide and has a conductivity between 1 and 500 ohms/square. The substrate (16) preferably comprises at least one of zinc sulfide, zinc selenide, germanium, and gallium arsenide. The protective layer (14) and substrate (16) should be made of different materials with different coefficients of thermal expansion to allow debonding by heating above the bonding temperature.

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"Semiconductor wafer bonding: recent developments", Materials Chemistry and Physics, by Q.-Y Tong and U. Gosele*, 37 (1994) 101, 102, 113, 114.
U. S. Patent Application entitled "Composite Infrared Windows Fabricated By Direct Bonding", U. S. Serial No. 08/340,676, filed Nov. 16, 1994, Feng et al.

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